METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE

• Main Author: NISHIGUCHI TARO
• Format: Patent
• Language: English
• Published: 04.02.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which improves channel mobility by reducing an interface level density in the vicinity of an interface between a semiconductor substrate and an oxide film of the silicon carbide semiconductor device, and to provide a method of manufacturing the same. SOLUTION: The method of manufacturing the silicon carbide semiconductor device includes a step of forming an oxide layer mainly composed of a silicon oxide film on the surface of the semiconductor substrate 1 of silicon carbide. One main surface of the oxide layer that does not oppose a silicon carbide epitaxial layer 2 is exposed to a gas containing a group-III element in a heated atmosphere to make the oxide layer contain a group-III atom. Then, the group-III atom diffused in the vicinity of the interface between the oxide layer and the semiconductor substrate 1 is made to terminate the interface level, thus the channel mobility of the silicon carbide semiconductor device is made improved. COPYRIGHT: (C)2010,JPO&INPIT