SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve the reliability of electromigration, while maintaining interconnection resistance to be low, and to provide a method of manufacturing the same. SOLUTION: A copper interconnection layer CL1 is formed in an interconnection trenc...

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Bibliographic Details
Main Authors MIYAZAKI HIROSHI, FUKUI KATSUICHI, KODAMA DAISUKE, MURATA TATSUKI
Format Patent
LanguageEnglish
Published 14.01.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve the reliability of electromigration, while maintaining interconnection resistance to be low, and to provide a method of manufacturing the same. SOLUTION: A copper interconnection layer CL1 is formed in an interconnection trench IT1, on the surface of an interlayer insulating film II2. A diffusion preventing insulating film DP is formed so as to cover the copper interconnection layer CL1 and is made of at least either SiC or SiCN. An insulating film SI is formed on the copper interconnection layer CL1, via the diffusion-preventing insulating film DP interposed and is made of SiN. COPYRIGHT: (C)2010,JPO&INPIT
Bibliography:Application Number: JP20090049552