MIRROR FOR EXTREME ULTRA VIOLET, MANUFACTURING METHOD FOR MIRROR FOR EXTREME ULTRA VIOLET, AND EXTREME ULTRAVIOLET LIGHT SOURCE DEVICE

PROBLEM TO BE SOLVED: To provide an EUV light source device capable of eliminating lights other than EUV light, and supplying only the EUV light to an exposure machine. SOLUTION: A multilayer film of Mo/Si is formed on the front surface 131 of an EUV collector mirror 130, and blazed grooves 133 are...

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Bibliographic Details
Main Authors WAKABAYASHI OSAMU, GEORGE SOUMAGNE, MORIYA MASATO
Format Patent
LanguageEnglish
Published 07.01.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide an EUV light source device capable of eliminating lights other than EUV light, and supplying only the EUV light to an exposure machine. SOLUTION: A multilayer film of Mo/Si is formed on the front surface 131 of an EUV collector mirror 130, and blazed grooves 133 are formed in the multilayer film. A light 202, emitted from plasma 201, is made incident on the EUV collector mirror 130, and is reflected or diffracted. The reflected EUV light 203 (including diffracted EUV light) proceeds towards an intermediate focal point IF. The light of other wavelengths proceeds towards some positions separate from the focal point IF, because its reflection angle or diffraction angle is different. An aperture 150 for an SPF having an aperture portion 151 is provided at the IF. Accordingly, only the EUV light passes through the aperture portion 151 and is supplied to the exposure machine, while other light is blocked by the aperture 150. COPYRIGHT: (C)2010,JPO&INPIT
Bibliography:Application Number: JP20080212787