METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Author: HASUNUMA MASAHIKO
• Format: Patent
• Language: English
• Published: 07.01.2010
• Subjects: APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROFORMING; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which forms a uniform seed film having no film breaks. SOLUTION: The method of manufacturing the semiconductor device includes: a step (S102) of forming an insulating film on a substrate; a step (S104) of forming a mouth in the insulating film; a step (S110) of forming a photocalytic film inside the mouth; a step (S112) of irradiating ultraviolet rays on the photocalytic film while the photocalytic film is dipped in a solution having Cu; and a step (S114) of embedding Cu into the mouth by the electrolytic plating method. COPYRIGHT: (C)2010,JPO&INPIT