GROUP III NITRIDE SEMICONDUCTOR LAMINATE STRUCTURE AND MANUFACTURING METHOD THEREOF

• Main Authors: YOKOYAMA TAISUKE, SASAKI YASUMASA, HANAWA KENZO
• Format: Patent
• Language: English
• Published: 03.12.2009
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a GaN thin film with good crystallinity to provide a reliable high-luminance LED element or the like by using an AlN crystalline film seed layer which has high crystallinity and particularly ensures uniform flatness over the whole surface even when using a large substrate 100 mm or more in diameter. SOLUTION: The group III nitride semiconductor laminate structure includes an n-type semiconductor layer formed of a group III nitride semiconductor, a light emitting layer and a p-type semiconductor layer laminated on a sapphire substrate. The structure further includes an AlN crystalline film as a seed layer on the surface of the sapphire substrate, and the AlN crystalline film includes no crystal grain boundary based on observation of a vertically sectional TEM (transmission electron microscopic) image thereof in 200 nm observation visual field. The AlN crystallin film preferably includes no crystal grain boundary based on observation of a plane TEM image thereof in 200 nm four-directional observation visual field. The AlN crystalline film preferably includes a mathematical average surface roughness (Ra) of 2 or less. The oxygen content in the AlN crystalline film is 5 atm% or less. COPYRIGHT: (C)2010,JPO&INPIT