SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

• Main Authors: MORIYAMA TAKUJI, HARAGUCHI KEIICHI
• Format: Patent
• Language: English
• Published: 03.12.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To enhance the reliability of a semiconductor device having a nonvolatile memory. SOLUTION: A nonvolatile memory cell NVM 1 formed on a silicon substrate 1 includes a control gate electrode CG and memory gate electrode MG which are disposed adjacent to each other. A control gate insulating film IG is disposed between the silicon substrate 1 and the control gate electrode CG. A first insulating film IM1, trapping insulating film IS and second insulating film IM2 are disposed between the control gate electrode CG and the memory gate electrode MG. The first insulating film IM1 and the second insulating film IM2 are also integrally disposed between the silicon substrate 1 and the memory gate electrode MG. Meanwhile, the trapping insulating film IS is formed between the control gate electrode CG and the memory gate electrode MG but not disposed between the memory gate electrode MG and the silicon substrate 1. COPYRIGHT: (C)2010,JPO&INPIT