METHOD FOR FORMING PLASMA-PHOTO COMBINED CVD FILM
PROBLEM TO BE SOLVED: To provide a method for forming a plasma-photo combined CVD film, in which heat damage by an ion is effectively improved while using a plasma CVD method, and the film can be effectively formed even on a substrate which is poor in heat resistance and needs to be positively preve...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English |
Published |
03.12.2009
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | PROBLEM TO BE SOLVED: To provide a method for forming a plasma-photo combined CVD film, in which heat damage by an ion is effectively improved while using a plasma CVD method, and the film can be effectively formed even on a substrate which is poor in heat resistance and needs to be positively prevented from heat deformation. SOLUTION: The method comprises feeding a reactive gas into a plasma generating region 3, introducing the plasma generated in the region into a deposition chamber 5 containing a substrate 19 through a bypass formed by a plasma shield 7, and forming a film on the substrate 19 while promoting a CVD reaction by photoirradiation in the deposition chamber 5. COPYRIGHT: (C)2010,JPO&INPIT |
---|---|
Bibliography: | Application Number: JP20080135277 |