METHOD FOR FORMING PLASMA-PHOTO COMBINED CVD FILM

PROBLEM TO BE SOLVED: To provide a method for forming a plasma-photo combined CVD film, in which heat damage by an ion is effectively improved while using a plasma CVD method, and the film can be effectively formed even on a substrate which is poor in heat resistance and needs to be positively preve...

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Bibliographic Details
Main Authors INAGAKI HAJIME, IEGI TOSHIHIDE
Format Patent
LanguageEnglish
Published 03.12.2009
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Summary:PROBLEM TO BE SOLVED: To provide a method for forming a plasma-photo combined CVD film, in which heat damage by an ion is effectively improved while using a plasma CVD method, and the film can be effectively formed even on a substrate which is poor in heat resistance and needs to be positively prevented from heat deformation. SOLUTION: The method comprises feeding a reactive gas into a plasma generating region 3, introducing the plasma generated in the region into a deposition chamber 5 containing a substrate 19 through a bypass formed by a plasma shield 7, and forming a film on the substrate 19 while promoting a CVD reaction by photoirradiation in the deposition chamber 5. COPYRIGHT: (C)2010,JPO&INPIT
Bibliography:Application Number: JP20080135277