METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ETCHING DEVICE

• Main Author: KOMURO MASAHIRO
• Format: Patent
• Language: English
• Published: 26.11.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

PROBLEM TO BE SOLVED: To suppress roughening in the peripheral edge of an etched layer in a process of removing a hard mask. SOLUTION: An etching device includes a reaction chamber 10, an electrode 20, a stage 30, and a shadow ring 40. An etching gas is introduced in the reaction chamber 10. The electrode 20 is arranged in the reaction chamber and used to generate plasma by ionizing the etching gas. The stage 30 is arranged in the reaction chamber 10, and a substrate 50 is mounted thereupon. The shadow ring 40 is arranged in the reaction chamber 10 and positioned above the stage 30. The shadow ring 40 covers the peripheral edge of the substrate 50 and a region inside it in a non-contact manner. The shadow ring 40 has an uneven pattern on an inner peripheral side. COPYRIGHT: (C)2010,JPO&INPIT