SUBSTRATE PROCESSING APPARATUS

• Main Authors: ITO TAKESHI, NOMURA RUI
• Format: Patent
• Language: English
• Published: 17.09.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To enable batch processing of a larger number of substrates to be processed by loading a larger number of substrates to be processed with respect to a reaction chamber of a limited volume in a vertical type substrate processing apparatus. SOLUTION: The substrate processing apparatus for processing a substrate to be processed by supplying a processing gas to a reaction chamber maintained at a predetermined temperature and a predetermined pressure includes a plurality of electrodes 14 having a substrate setting part 14a for placing a substrate to be processed on the same plane and a power supply part 14b for supplying a high-frequency power thereto and being supported in a multiple grades by a reaction chamber 201, and a high-frequency power supply means for supplying a high-frequency power of phase different by 180° to the power supply part of each pair of electrodes 14, 14 disposed facing each other as a pair. COPYRIGHT: (C)2009,JPO&INPIT