MANUFACTURING METHOD FOR LIGHT-EMITTING DIODE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR FUNCTION ELEMENT

PROBLEM TO BE SOLVED: To provide a manufacturing method for a light-emitting diode, wherein a substrate can be easily exfoliated at low cost without almost damaging nitride-based group III-V compound semiconductor layers that form a light-emitting diode structure after such layers are grown on the s...

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Bibliographic Details
Main Author YASUDA TOSHIKAZU
Format Patent
LanguageEnglish
Published 17.09.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a manufacturing method for a light-emitting diode, wherein a substrate can be easily exfoliated at low cost without almost damaging nitride-based group III-V compound semiconductor layers that form a light-emitting diode structure after such layers are grown on the substrate, and a vertical current injection type light-emitting diode can be easily manufactured. SOLUTION: A metallic convex portion 12 is formed on a substrate 11, and nitride-based group III-V compound semiconductor layers 14 are grown at a concave portion 13 between the convex portion 12 and the substrate after the concave portion 13 takes a shape of a triangular cross section with a bottom face as a base. After the lateral growth of the nitride-based group III-V compound semiconductor layers 14, a light-emitting diode structure is formed by growing the nitride-based group III-V compound semiconductor layers including an active layer 17 thereon. Subsequently, the substrate 11 is exfoliated from those nitride-based group III-V compound semiconductor layers by removing the convex portion 12 through electrolysis. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20080052835