ELEMENT INSPECTION METHOD FOR ELECTRIC CONTACT STRUCTURE
PROBLEM TO BE SOLVED: To provide an element inspection method for an electric contact structure of a practical inspection probe suitable for inspection of a semiconductor device having external terminals narrow-pitched and made of material forming an oxide film. SOLUTION: A semiconductor inspection...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
10.09.2009
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide an element inspection method for an electric contact structure of a practical inspection probe suitable for inspection of a semiconductor device having external terminals narrow-pitched and made of material forming an oxide film. SOLUTION: A semiconductor inspection device (a prober) with a built-in vibrational energy generator is used, and after a probe with an electric contact structure is allowed to probe semiconductor device electrodes, vibration in one of lateral, longitudinal and oblique directions is propagated to the semiconductor device to vibrate the semiconductor device electrodes in the lateral, longitudinal or oblique direction to thereby break the oxide film with micro unevenness. In this mechanism, when the arrangement of probe pins and electrode shape are taken into consideration, it is optimum to operate in the oblique direction. COPYRIGHT: (C)2009,JPO&INPIT |
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Bibliography: | Application Number: JP20090145165 |