ELEMENT INSPECTION METHOD FOR ELECTRIC CONTACT STRUCTURE

PROBLEM TO BE SOLVED: To provide an element inspection method for an electric contact structure of a practical inspection probe suitable for inspection of a semiconductor device having external terminals narrow-pitched and made of material forming an oxide film. SOLUTION: A semiconductor inspection...

Full description

Saved in:
Bibliographic Details
Main Authors ITO KATSUMICHI, TANIOKA MICHINAGA, NEMOTO YOSHIHIKO
Format Patent
LanguageEnglish
Published 10.09.2009
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:PROBLEM TO BE SOLVED: To provide an element inspection method for an electric contact structure of a practical inspection probe suitable for inspection of a semiconductor device having external terminals narrow-pitched and made of material forming an oxide film. SOLUTION: A semiconductor inspection device (a prober) with a built-in vibrational energy generator is used, and after a probe with an electric contact structure is allowed to probe semiconductor device electrodes, vibration in one of lateral, longitudinal and oblique directions is propagated to the semiconductor device to vibrate the semiconductor device electrodes in the lateral, longitudinal or oblique direction to thereby break the oxide film with micro unevenness. In this mechanism, when the arrangement of probe pins and electrode shape are taken into consideration, it is optimum to operate in the oblique direction. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20090145165