ASHING METHOD, ASHING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide an ashing method capable of suppressing a popping phenomenon, to provide an ashing apparatus, and to provide a method of manufacturing a semiconductor device. SOLUTION: In the ashing method, while irradiating a heating gas to a resist pattern 101 that is formed at th...

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Bibliographic Details
Main Author ONODERA YASUHIRO
Format Patent
LanguageEnglish
Published 20.08.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide an ashing method capable of suppressing a popping phenomenon, to provide an ashing apparatus, and to provide a method of manufacturing a semiconductor device. SOLUTION: In the ashing method, while irradiating a heating gas to a resist pattern 101 that is formed at the upper part of a silicon substrate 100 and having an alteration layer 101b formed at the surface layer in an oxygen-containing atmosphere, the silicon substrate 100 is cooled down to the temperature lower than the heating gas to remove the resist pattern 101. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20080027171