SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To increase reliability of a semiconductor device by improving connection reliability of a passive component. SOLUTION: A first through-hole 6c is formed in the first electrode part 6b of a first plate-like lead 6, and a second through-hole 7c is formed in the second electrode...

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Bibliographic Details
Main Authors ASHIDA YOSHIAKI, KONO KENYA, SHIMIZU KAZUO, MACHIDA YUICHI
Format Patent
LanguageEnglish
Published 13.08.2009
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Summary:PROBLEM TO BE SOLVED: To increase reliability of a semiconductor device by improving connection reliability of a passive component. SOLUTION: A first through-hole 6c is formed in the first electrode part 6b of a first plate-like lead 6, and a second through-hole 7c is formed in the second electrode part 7b of a second plate-like lead 7. As a result, at the first electrode part 6b of the first plate-like lead 6, one external terminal 5b of the passive component 5 can be connected to the first electrode parts 6b on both sides of the first through-hole 6c while striding over the first through-hole 6c. Also, at the second electrode part 7b of the second plate-like lead 7, the other external terminal 5b of the passive component 5 can be connected to the second electrode parts 7b on both sides of the second through-hole 7c while striding over the second through-hole 7c. Accordingly, at a central portions both in the longitudinal and width directions of the passive component 5, the passive component 5 is surrounded by sealing members 12. As a result, thermal stress applied to bonding materials 13 such as solder can be reduced, and the reliability of the semiconductor device (semiconductor package 1) is improved. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20080017650