SEMICONDUCTOR SWITCH CIRCUIT

PROBLEM TO BE SOLVED: To suppress reduction of a terminal voltage boosted due to an increase of a gate leak current even when a large power is transmitted when an ambient temperature is high, and to improve a harmonic distortion characteristic. SOLUTION: Upon transmission, a step-up voltage V1 obtai...

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Bibliographic Details
Main Authors TOSHINAMI YOSHIYUKI, YOSHINAGA HIROYUKI, MORI MAKI
Format Patent
LanguageEnglish
Published 06.08.2009
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
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Summary:PROBLEM TO BE SOLVED: To suppress reduction of a terminal voltage boosted due to an increase of a gate leak current even when a large power is transmitted when an ambient temperature is high, and to improve a harmonic distortion characteristic. SOLUTION: Upon transmission, a step-up voltage V1 obtained by a step-up circuit 21 is applied to a gate of a first switch element 31 by a decoder circuit 22. On the other hand, 0V is applied to the gate of a second switch element 32, and the first switch element 31 becomes conductive and the second switch element 32 becomes non-conductive. Further, a third switch element 33 becomes conductive, and a diode 39 is set to a reverse-bias state. Therefore, even a gate leak current of the second switch element 32 increases, the reduction of the boosted terminal voltage can be avoided. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20080013917