NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device in which a memory cell array is reducible in size, and to provide a method of manufacturing the same. SOLUTION: The nonvolatile semiconductor storage device includes an element region 10 and an element isolation region 20 fo...

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Bibliographic Details
Main Author TERADA NAOZUMI
Format Patent
LanguageEnglish
Published 23.07.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device in which a memory cell array is reducible in size, and to provide a method of manufacturing the same. SOLUTION: The nonvolatile semiconductor storage device includes an element region 10 and an element isolation region 20 formed on a semiconductor substrate 1 with an x direction as a longitudinal direction. Further, the nonvolatile semiconductor storage device includes a cell transistor CT formed in the element region 10 and a selection transistor ST for selecting the cell transistor CT. A control gate line CGL is connected to a plurality of memory cells MC arrayed in a y direction side by side in common and arrayed extending in the y direction, and the control gate line CGL has a first width D2 on the element region 10 and a second width D1 wider than the first width D2 on the element isolation region 20. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20080000705