SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To suppress formation of a void as a connection defect caused by trapping of a gas in a connection layer by eliminating the need of working, such as, grooving on the reverse surface of a semiconductor element, even when a semiconductor is connected using a conductive adhesive p...

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Bibliographic Details
Main Authors IDETA GORO, KIM KEUNSOO, KIM DOSEOP, SUGANUMA KATSUAKI
Format Patent
LanguageEnglish
Published 23.07.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To suppress formation of a void as a connection defect caused by trapping of a gas in a connection layer by eliminating the need of working, such as, grooving on the reverse surface of a semiconductor element, even when a semiconductor is connected using a conductive adhesive producing an extremely large amount of gas. SOLUTION: A connection layer for connecting the semiconductor element 1 and a base material 2c has a laminated structure of an air gap layer 13 and a bonding layer 7, and consequently, a gas can be dissipated efficiently d to the outside of the connection layer in a process of connection. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20070339952