NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To obtain a nitride semiconductor device that can reduce contact resistance at the interface of a p-type electrode and a nitride semiconductor layer. SOLUTION: The nitride semiconductor device 10 includes: a p-type nitride semiconductor layer 1 and a p-type electrode 3 formed o...

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Bibliographic Details
Main Authors OISHI TOSHIYUKI, SHIOZAWA KATSUOMI, KANEMOTO KYOZO, TOKUDA YASUKI, TARUI YOICHIRO
Format Patent
LanguageEnglish
Published 09.07.2009
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To obtain a nitride semiconductor device that can reduce contact resistance at the interface of a p-type electrode and a nitride semiconductor layer. SOLUTION: The nitride semiconductor device 10 includes: a p-type nitride semiconductor layer 1 and a p-type electrode 3 formed on the p-type nitride semiconductor layer 1. The p-type electrode 3 is formed by successive laminations of a metal layer 3a of a metal having a work function of 5.1 eV or more, a Pd layer 3b of palladium (Pd), and a Ta layer 3c of tantalum (Ta) on the P-type nitride semiconductor layer 1. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20070328450