SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a technique for reducing the fraction defective of a semiconductor device by preventing crystal defects generated in an active region. SOLUTION: An embodiment 1 relates to plane constitution of an SRAM. One of features of the embodiment 1 is to make terminal portions...

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Bibliographic Details
Main Authors UCHIDA TETSUYA, KIJIMA TAKEHIKO, YAMAGUCHI NATSUO, YOSHIDA SEIJI, ISHIZUKA NORIO, KIMURA YASUHIRO, ABIKO MINORU, TAKEUCHI TAKASHI, ISHIDA HIROSHI, MAEDA ATSUSHI
Format Patent
LanguageEnglish
Published 11.06.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a technique for reducing the fraction defective of a semiconductor device by preventing crystal defects generated in an active region. SOLUTION: An embodiment 1 relates to plane constitution of an SRAM. One of features of the embodiment 1 is to make terminal portions T0, T1, T2, and T3 wider than center portions of active regions An0, An1, An2, and An3 on the assumption that the active regions An0, An1, An2, and An3 in an n-channel MISFET formation region are all separate structures as shown in Fig.4. For example, the terminal portions T0, T1, T2, and T3 are formed an L shape. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20070304183