CLEANING METHOD OF THIN FILM FORMATION APPARATUS, THIN FILM FORMATION METHOD, THIN FILM FORMATION DEVICE, AND PROGRAM

• Main Authors: NODERA NOBUTAKE, HASEBE KAZUHIDE, SATO JUN, YAMAMOTO KAZUYA
• Format: Patent
• Language: English
• Published: 28.05.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a thin film formation method which can efficiently form thin film, and to provide a thin film formation device and a program. SOLUTION: A control unit of a thin film forming device 1 feeds a cleaning gas from cleaning gas supply pipes 10a, 10b, 10c in cleaning treatment, and at the same time, feeds a dilution gas from a first treatment gas supply pipe 8 and a second treatment gas supply pipe 9. When deposit which adhered in the second treatment gas supply pipe 9 is removed, the flux rate of the dilution gas from the second treatment gas supply pipe 9 is reduced, as compared to those of the dilution gases from the first treatment gas supply pipe 8 and the cleaning gas supply pipe 10c, and then the cleaning gas is fed inside the second treatment gas supply pipe 9. COPYRIGHT: (C)2009,JPO&INPIT