PROCESS FOR MANUFACTURING INTERCONNECTION

PROBLEM TO BE SOLVED: To provide an integrated circuit, having a dual-damascene structure, and to provide a manufacturing process for forming the dual-damascene structure, while eliminating superfluous steps. SOLUTION: A process for forming the dual-damascene structure is provided. The process is fo...

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Bibliographic Details
Main Authors MERCHANT SAILESH MANSINH, SEIRII CHITEIPEDEI
Format Patent
LanguageEnglish
Published 21.05.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide an integrated circuit, having a dual-damascene structure, and to provide a manufacturing process for forming the dual-damascene structure, while eliminating superfluous steps. SOLUTION: A process for forming the dual-damascene structure is provided. The process is for forming a stack including an insulator layer and a stop layer, having two masks formed on the stack. One of the masks is used for forming a via or a contact opening in the insulator layer, and the second mask is used for forming a recess for interconnection in the integrated circuit. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20090032389