SUBSTRATE PROCESSOR, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• Main Authors: TATENO HIDETO, YANAGAWA HIDEHIRO
• Format: Patent
• Language: English
• Published: 21.05.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To prevent generation of an adverse effect in opening of a pod by a pod opener. SOLUTION: A wafer transfer port which transfers a wafer 9 between the pod 10 and a port is equipped with the pod opener which attaches/detaches a door 10a of the pod 10 to open/close a wafer input/output port 10b, to a base 21 of the pod opener, a chamber 60 which covers a wafer input/output port 22 of the base 21 is installed, a feed pipe 63, an exhaust pipe 64 which circulate nitrogen gas in a closure storage chamber 61 are connected to the chamber 60. The nitrogen gas 62 is filled in the closure storage chamber 61 of the chamber 60 in opening of the pod to purge the air and moisture of the closer storage chamber 61, a wafer storage chamber 10c of the pod 10 by the nitrogen gas 62. Since discharge of the atmosphere in the pod to a wafer transfer space is prevented, contamination of the transfer space, elevation of oxide concentration, wafer oxidation and particle adhesion are prevented. COPYRIGHT: (C)2009,JPO&INPIT