METHOD AND DEVICE OF LOW-ENERGY ELECTRON ACCELERATION ETCHING AND CLEANING OF SUBSTRATE

• Main Authors: MARTIN KEVIN P, GILLIS HARRY P, CHOUTOV DIMITRI A
• Format: Patent
• Language: English
• Published: 21.05.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method of low-damage, anisotropic etching and cleaning of a substrate including a step of mounting the substrate upon a mechanical support part arranged within a positive column of a plasma discharge generated by either an ac or dc plasma reactor. SOLUTION: The mechanical support part 12 is independent of the plasma reactor and capable of being electrically biased. The substrate is subjected to the positive column 15 of a plasma of low-energy electrons, that is, an electrical neutral part and a species reactive with the substrate. An additional structure 14 capable of being electrically biased can be arranged within the plasma to further adjust the extraction or retardation of particles from the plasma. COPYRIGHT: (C)2009,JPO&INPIT