METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND CAPACITOR, AND FILM DEPOSITION SYSTEM

• Main Authors: IKUTA HIROKO, WATANABE SATORU
• Format: Patent
• Language: English
• Published: 30.04.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To suppress the deterioration in characteristic of a MOS transistor or MIM capacitor by terminating a defect on an interface with an insulating film by doping an electrode formed of a conductor film with a large amount of heavy hydrogen. SOLUTION: A silicon source 13 is heated with an electron beam EB and then silicon atoms are emitted into a heavy hydrogen atmosphere 11 to deposit a silicon film on a substrate W. The silicon film is doped with heavy hydrogen to higher concentration than when deposited by a CVD method, and a defect such as a dangling bond is terminated with the heavy hydrogen. COPYRIGHT: (C)2009,JPO&INPIT