METHOD OF PRODUCING SUBSTRATE FOR EXTREME ULTRAVIOLET LITHOGRAPHY

PROBLEM TO BE SOLVED: To reduce the deviation of a thermal expansion coefficient in a method of forming a glass substrate for extreme ultraviolet lithography. SOLUTION: This method includes delivering a silica precursor (28) to a burner (16) and passing the silica precursor (28) through the flame (3...

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Bibliographic Details
Main Authors RUSSO NIKKI J, HRDINA KENNETH E, WASILEWSKI MICHAEL H
Format Patent
LanguageEnglish
Published 30.04.2009
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
GLASS
HOLOGRAPHY
MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
MATERIALS THEREFOR
METALLURGY
MINERAL OR SLAG WOOL
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To reduce the deviation of a thermal expansion coefficient in a method of forming a glass substrate for extreme ultraviolet lithography. SOLUTION: This method includes delivering a silica precursor (28) to a burner (16) and passing the silica precursor (28) through the flame (36) of the burner (16) to form silica particles (38), depositing the silica particles (38) on a planar surface (14) to form a flat porous EUV Lithography large dimension preform (40) and consolidating the flat porous EUV Lithography large dimension preform (40) into a flat dense EUV Lithography large dimension homogeneous glass body. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20090011710