ORGANIC FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING ORGANIC FIELD EFFECT TRANSISTOR, SEMICONDUCTOR DEVICE AND ELECTRONIC EQUIPMENT

• Main Author: KUNIKIYO TOSHIYUKI
• Format: Patent
• Language: English
• Published: 23.04.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide an organic field effect transistor for easily obtaining a structure suitable for both hole injection from a source electrode and electronic injection from a drain electrode, and for simplifying a manufacturing process. SOLUTION: This organic field effect transistor is provided with: a drain electrode 13 on a substrate; a channel layer 14 formed so as to be brought into contact with the drain electrode 13 on the substrate, and made of an acene chalcogen system molecule having an eternal plane structure for at least a C2h symmetrical operation; and a source electrode 15 formed on the channel layer 14 so as to be brought into contact with the channel layer 14. An angle made by at least a portion of a section brought into contact with a channel 16 formed in the channel layer 14 in an interface between the source electrode 15 and the channel layer 14 and the long axis of the acene chalcogen system molecule is set so as to be larger than an angle made by at least a portion of a section brought into contact with the channel 16 in an interface between the drain electrode 13 and the channel layer 14 and the long axis of the acene chalcogen system molecule. COPYRIGHT: (C)2009,JPO&INPIT