SUBSTRATE PROCESSING METHOD, PROGRAM, AND COMPUTER STORAGE MEDIUM

PROBLEM TO BE SOLVED: To form a uniform coating film on a substrate by oxidizing the coating film on the substrate to the inside thereof. SOLUTION: A coating solution containing polysilazane is applied to a wafer to form a coating film (step S1), and thereafter the wafer is heated to evaporate a par...

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Bibliographic Details
Main Authors MURAMATSU MAKOTO, FUJII HIROYUKI, YO HAJIME, TERADA SHOICHI, NISHI TAKANORI
Format Patent
LanguageEnglish
Published 09.04.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To form a uniform coating film on a substrate by oxidizing the coating film on the substrate to the inside thereof. SOLUTION: A coating solution containing polysilazane is applied to a wafer to form a coating film (step S1), and thereafter the wafer is heated to evaporate a part of a solvent in the coating film (step S2). Thereafter, the wafer is irradiated with an ultraviolet ray to cut molecular bonds of Si-N and molecular bonds of Si-H in the coating film (step S3). Thereafter, the coating film is oxidized in steam while heating the wafer (step S4). Thereafter, a desired coating film is formed on the wafer by baking the wafer and dehydrating and condensing the coating film (step S5). COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20080192129