SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To suppress an off-leakage current in an N-channel MISFET having a silicided source/drain region formed in an Si (110) substrate. SOLUTION: The semiconductor apparatus includes the N-channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed on a semiconducto...

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Bibliographic Details
Main Authors YAMAGUCHI SUNAO, KASHIWABARA KEIICHIROU, OKUDAIRA TOMOHITO, TSUTSUMI TOSHIAKI
Format Patent
LanguageEnglish
Published 09.04.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To suppress an off-leakage current in an N-channel MISFET having a silicided source/drain region formed in an Si (110) substrate. SOLUTION: The semiconductor apparatus includes the N-channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed on a semiconductor substrate having a main surface of which plane orientation is (110) plane, having the silicide of nickel or nickel alloy at least in one upper portion of the source region and the drain region. Among them, the N-channel MISFET of which channel width is less than 400 nm is laid out so that the channel length direction is made to be crystal orientation . COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20070244988