SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To suppress diffusion of electric charges accumulated in ONO films onto bit lines or to reduce contact resistance between the bit lines and plug metal. SOLUTION: A semiconductor device has bit lines 30 provided in a semiconductor substrate 10, first ONO films 20 provided on a s...

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Bibliographic Details
Main Authors MURAI HIROSHI, AZUMA MASAHIKO
Format Patent
LanguageEnglish
Published 09.04.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To suppress diffusion of electric charges accumulated in ONO films onto bit lines or to reduce contact resistance between the bit lines and plug metal. SOLUTION: A semiconductor device has bit lines 30 provided in a semiconductor substrate 10, first ONO films 20 provided on a semiconductor between the bit lines, and second ONO films 22 provided on the bit lines. The film thickness of a first silicon nitride film 15 in the first ONO film is larger than the film thickness of a second silicon nitride film 16 in the second ONO film. A manufacturing method thereof is also provided. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20070243952