MANUFACTURING METHOD FOR ELECTRO-OPTICAL DEVICE, AND ETCHING METHOD

• Main Author: ONO TATSUKI
• Format: Patent
• Language: English
• Published: 09.04.2009
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To restrain an etching rate from lowering caused by continuous etching by only a mixed acid, by etching buffered hydrofluoric acid after etching by the mixed acid that is a chemical liquid mixed with hydrogen fluoride HF and nitric acid HNO3, and to uniformly remove a conductive film on a surface of a substrate, or a conductive film on a reverse face of the substrate. SOLUTION: A polysilicon film 180f on one face 110f of a mother board 110, and a polysilicon film 180r on the other face 110r, are removed without remaining the polysilicon film 180f formed on the one face 110f of the mother board 110, and the polysilicon film 180r formed on the other face 110r, since supplying at least two kinds of the mixed acid that is the chemical liquid mixed with hydrogen fluoride HF and nitric acid HNO3, and the buffered hydrofluoric acid that is the chemical liquid mixed with ammonium fluoride and hydrofluoric acid, respectively as to individual kinds, in this manufacturing method for an electro-optical device. COPYRIGHT: (C)2009,JPO&INPIT