SEMICONDUCTOR MANUFACTURING DEVICE

• Main Authors: VAN GOGH JAMES, FORSTER JOHN C
• Format: Patent
• Language: English
• Published: 19.03.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INDUCTANCES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MAGNETS; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSFORMERS

PROBLEM TO BE SOLVED: To provide a device for etching a layer or sputter-depositing a layer for improving the uniformity. SOLUTION: In a plasma deposition device for depositing a sputtered target material on a substrate, capacitance in an impedance-matching box for an RF coil is varied during the deposition process in such a manner that heating of the RF coil and the substrate and the film deposition become more uniform according to "time-averaging" of the RF voltage distribution along the RF coil. COPYRIGHT: (C)2009,JPO&INPIT