SEMICONDUCTOR DEVICE

• Main Authors: OISHI TOSHIYUKI, TOKUDA YASUKI, FUKITA MUNEYOSHI, ABE YUJI, NANJO TAKUMA
• Format: Patent
• Language: English
• Published: 05.03.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To reduce contact resistance of a source/drain (ohmic) electrode even when a channel layer is formed with a material having a relatively large bandgap. SOLUTION: In a hetero junction field effect type transistor where a channel layer 3 made of a first nitride semiconductor and a barrier layer 4 made of a second nitride semiconductor having a larger bandgap than the first nitride semiconductor form hetero junction, the bandgap of the first nitride semiconductor forming a channel layer 4 is made 3.8 eV or more and a high concentration n type impurity region 6 with impurity concentration of 1×1018cm-3is formed just under each source/drain electrode 7. Alternatively, the first nitride semiconductor of the channel layer may be made AlxGa1-xN (0.16≤x<1) and a high concentration n type impurity region 6 with impurity concentration of 1×1018cm-3or more may be made just under each source/drain electrode 7. COPYRIGHT: (C)2009,JPO&INPIT