MANUFACTURING METHOD OF LIGHT EMITTING DIODE, MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD OF FUNCTION ELEMENT

• Main Author: YASUDA TOSHIKAZU
• Format: Patent
• Language: English
• Published: 26.02.2009
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a manufacturing method of a light emitting diode in which a silicon substrate can be easily peeled at low cost nearly without physically damaging nitride-based group III-V compound semiconductor layers forming a light emitting diode structure after the nitride-based group III-V compound semiconductor layers are grown on the silicon substrate to easily manufacture a vertical current injection type diode. SOLUTION: On one principal surface of an n-type Si substrate 11, the nitride-based group III-V compound semiconductor layer 13, an n-type active layer 14, and a p-type nitride-based group III-V compound semiconductor layer 15 are grown with a buffer layer 12 interposed therebetween to form the light emitting diode structure. Lithium ions are electrochemically injected into the n-type Si substrate 11 to peel the n-type Si substrate 11 from the nitride-based group III-V compound semiconductor layer 13, n-type active layer 14, and a p-type nitride-based group III-V compound semiconductor layer 15. COPYRIGHT: (C)2009,JPO&INPIT