SEMICONDUCTOR LIGHT-EMITTING DEVICE
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. SOLUTION: The semiconductor light-emitting device includes a substrate,...
Saved in:
Main Authors | , , , , , |
---|---|
Format | Patent |
Language | English |
Published |
05.02.2009
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. SOLUTION: The semiconductor light-emitting device includes a substrate, a reflective electrode, a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked. Here, the reflective electrode includes: a first reflective layer provided on the substrate and including a conductive reflective material reflecting light generated from the active layer; and a second reflective layer provided on the first reflective layer, including one or more dielectric portions reflecting light generated from the active layer, and one or more contact holes filled with a conductive filler to electrically connect the first conductivity type semiconductor layer and the first reflective layer, and having a greater thickness than a wavelength of the generated light. COPYRIGHT: (C)2009,JPO&INPIT |
---|---|
Bibliography: | Application Number: JP20080189774 |