SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a lateral type MOSFET for use in an integrated-type intelligent switching device, a double integrated-type input signal/transmission IC, or an integrated-type power IC, wherein an ESD resistance and a surge resistance are increased in a smaller chip area, without emp...

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Bibliographic Details
Main Authors FUJIHIRA TATSUHIKO, ICHIMURA TAKESHI, KUMAGAI NAOKI, YOSHIDA KAZUHIKO
Format Patent
LanguageEnglish
Published 29.01.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a lateral type MOSFET for use in an integrated-type intelligent switching device, a double integrated-type input signal/transmission IC, or an integrated-type power IC, wherein an ESD resistance and a surge resistance are increased in a smaller chip area, without employing a complicated isolation structure. SOLUTION: A surface electrode 48 of a vertical type bipolar transistor which has the base and the emitter short-circuited by the surface electrode 48 and has a p-type epitaxial growing layer 43 and a p-type semiconductor substrate 44 as collectors and a drain electrode 52 of the lateral type MOSFET are electrically connected by metal electrode wiring 54. When a high ESD voltage or a high surge voltage is applied, ESD and surge energy are absorbed by the operation of the vertical type bipolar transistor, and also the voltages are limited to a voltage lower than the breakdown voltage of the lateral type MOSFET leading to breakdown. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20080226831