SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a technique for easily and mixedly mounting a plurality of bipolar transistors, where the breakdown voltages between the collector and emitter differ, on the same substrate. SOLUTION: In a semiconductor device, a high-frequency bipolar transistor and high breakdown v...

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Bibliographic Details
Main Authors ARAI MITSURU, WADA SHINICHIRO, HOSOE HIDEYUKI
Format Patent
LanguageEnglish
Published 29.01.2009
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a technique for easily and mixedly mounting a plurality of bipolar transistors, where the breakdown voltages between the collector and emitter differ, on the same substrate. SOLUTION: In a semiconductor device, a high-frequency bipolar transistor and high breakdown voltage bipolar transistor are mixedly mounted onto the same substrate. The high-frequency bipolar transistor and the high breakdown voltage one are each formed on an epitaxial growth layer having the same film thickness, and each have an embedded collector region having the same impurity profile formed by the same process. There is the embedded collector region directly below the base of the high-frequency bipolar transistor. No embedded collector regions and SIC regions exist directly below the base of the high breakdown voltage bipolar transistor. The distance between the base region and the collector plug region of the high breakdown bipolar transistor is equal to or longer than that of the high-frequency bipolar transistor. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20070181610