PLASMA PROCESSING DEVICE AND METHOD

• Main Authors: LIM KYUNG CHUN, SON GIL SU, KWON TAE YONG, SUNG DONG YONG
• Format: Patent
• Language: English
• Published: 08.01.2009
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To maximize a plasma electron density while holding the plasma electron density under a steady-state, and to increase the speed of a semiconductor process in a plasma processing device treating a semiconductor substrate by using plasma and a method for the plasma processing device. SOLUTION: The plasma processing device contains a chamber generating the plasma and treating the semiconductor substrate, upper and lower electrodes arranged in the chamber, a DC-voltage feeder feeding either one of the upper and lower electrodes with a DC voltage and a control section adjusting the power ratio of the DC voltage fed from the DC-voltage feeder to either one of the upper and lower electrodes. The plasma electron density is maximized by previously closing electrons surely so as not to be discharged from the plasma. COPYRIGHT: (C)2009,JPO&INPIT