AMPLIFYING CIRCUIT OF MICROWAVE SIGNAL

PROBLEM TO BE SOLVED: To provide an amplifying circuit of a microwave signal capable of setting gate bias voltage near ground potential, preventing changes in the gate bias voltage even when FET amplifying elements are operated near a saturation region, and preventing lowering of output voltage. SOL...

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Bibliographic Details
Main Authors YUNOGAMI NORIHIRO, SAEKI MASATO
Format Patent
LanguageEnglish
Published 25.12.2008
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Summary:PROBLEM TO BE SOLVED: To provide an amplifying circuit of a microwave signal capable of setting gate bias voltage near ground potential, preventing changes in the gate bias voltage even when FET amplifying elements are operated near a saturation region, and preventing lowering of output voltage. SOLUTION: A bias circuit connected so that gate bias voltage is supplied for a gate terminal includes: a positive-current amplifying transistor connected between a first voltage terminal for receiving supply of positive voltage and the gate terminal; a negative-current amplifying transistor connected between a second voltage terminal for receiving negative voltage and the gate terminal; a common bias circuit with respect to the positive amplifying transistor and the negative-current amplifying transistor; and a bias setting circuit for supplying gate bias setting voltage corresponding to the gate bias voltage for the common bias circuit. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20070155192