SUBSTRATE PRODUCTION METHOD

• Main Author: OIDE HIROYUKI
• Format: Patent
• Language: English
• Published: 18.12.2008
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a substrate production method that can easily perform the processing, including a film deposition process, an etching process, a resist peeling process for a substrate to be processed under the presence of supercritical fluid. SOLUTION: The substrate production method is the substrate production method that processes the surface of the substrate with a step of filling a reaction chamber, where the substrate is installed with supercritical fluid and a step to make materials dissolved in this supercritical fluid react close to the surface of the substrate. The substrate is installed at the cealing 10 inside the reaction chamber, with the surface of the substrate facing downward. COPYRIGHT: (C)2009,JPO&INPIT