METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To suppress current collapse and peeling and floating of an insulating film. SOLUTION: The method of manufacturing a semiconductor device performs heat treatment for forming ohmic electrodes 17 and 18 on a GaN semiconductor layer 16. The heat treatment is performed while the si...

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Bibliographic Details
Main Authors KOMATANI TSUTOMU, IKUMATSU HITOSHI, NISHI SHINKO
Format Patent
LanguageEnglish
Published 18.12.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To suppress current collapse and peeling and floating of an insulating film. SOLUTION: The method of manufacturing a semiconductor device performs heat treatment for forming ohmic electrodes 17 and 18 on a GaN semiconductor layer 16. The heat treatment is performed while the side walls of the ohmic electrodes 17 and 18 are away from a side wall of an insulating film 24 provided on the GaN semiconductor layer 16. The invention suppresses current collapse and peeling and floating of the insulating film. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20070152495