METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To effectively reduce current collapse even when a silicon nitride film having a low refractive index is used. SOLUTION: The present invention relates to a manufacturing method of a semiconductor device including the stages of: forming a silicon nitride film 18 of ≥2.1 to <2...

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Bibliographic Details
Main Authors KOMATANI TSUTOMU, IKUMATSU HITOSHI, NISHI SHINKO
Format Patent
LanguageEnglish
Published 18.12.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To effectively reduce current collapse even when a silicon nitride film having a low refractive index is used. SOLUTION: The present invention relates to a manufacturing method of a semiconductor device including the stages of: forming a silicon nitride film 18 of ≥2.1 to <2.2 in refractive index on a GaN-based semiconductor layer 16; forming ohmic electrodes 20 and 22 in openings of the silicon nitride film 18; and heat-treating the ohmic electrodes 20 and 22. In the present invention, the current collapse can be prevented by heat-treating the ohmic electrodes in a state wherein the silicon nitride film 18 having a refractive index of ≥2.1 is formed. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20070152494