REAR SURFACE IRRADIATION TYPE IMAGING ELEMENT, AND MANUFACTURING METHOD THEREOF

• Main Author: UIE SHINJI
• Format: Patent
• Language: English
• Published: 11.12.2008
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a rear surface irradiation type imaging element capable of improving element characteristics, improving yield and reducing color mixture. SOLUTION: The rear surface irradiation type imaging element irradiates the rear surface of a silicon substrate 1 with a light, and reads charges generated in the silicon substrate 1 through the front surface of the silicon substrate 1 in response to the light to image an image. The imaging element is provided with rear surface element configuring layers (8, 9, 10) configuring rear surface elements formed on the rear surface of the silicon substrate 1, front surface element configuring layers (2, 3, 4, 5) configuring front surface elements formed on the front surface of the silicon substrate 1, a supporting substrate 6 formed above the front surface element configuring layers, spacers S used for uniforming a distance between the silicon substrate 1 and the supporting substrate 6 and having one end contacting the front surface element configuring layer (5) and the other end contacting the supporting substrate 6, and an adhesive member 7 filled in the space between the front surface element configuring layer and the supporting substrate 6 which is formed by the spacers S. COPYRIGHT: (C)2009,JPO&INPIT