SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a technology for preventing an impurity in one gate electrode from spreading to the other gate electrode and reducing a contact resistance between the gate electrode and a contact plug. SOLUTION: A gate electrode 30 has an N-type gate portion 30N and a P-type gate po...

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Bibliographic Details
Main Authors OKADA MASAKAZU, NISHIDA AKIO, TSUBOI NOBUO
Format Patent
LanguageEnglish
Published 27.11.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a technology for preventing an impurity in one gate electrode from spreading to the other gate electrode and reducing a contact resistance between the gate electrode and a contact plug. SOLUTION: A gate electrode 30 has an N-type gate portion 30N and a P-type gate portion 30P. A cut portion 33 is formed in a border region BR between the N-type and P-type gate portions on a side surface 31 of the gate electrode 30. A shortest distance between a region 31NN in which the cut portion 33 is formed in a side surface 31N of the N-type gate portion 30N and a side surface 32N of the N-type gate portion 30N is set to be shorter than the width of a portion immediately above a first active region in the N-type gate portion 30N. A contact plug 40 comes into contact with the upper surfaces of the N-type and P-type gate portions and a region in which the cut portion 33 of the side surface 31 of the gate electrode 30 is formed. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20070132241