RESIN COMPOSITION FOR PATTERN REVERSE AND METHOD FOR FORMING REVERSED PATTERN

PROBLEM TO BE SOLVED: To provide a resin composition for pattern reverse, the resin composition capable of being suitably embedded in a resist pattern formed on a substrate without mixing the resist pattern and showing excellent durability against oxygen ashing and storage stability, and to provide...

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Bibliographic Details
Main Authors TANAKA MASATO, TOYOKAWA IKUHIRO, KONNO KEIJI
Format Patent
LanguageEnglish
Published 27.11.2008
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:PROBLEM TO BE SOLVED: To provide a resin composition for pattern reverse, the resin composition capable of being suitably embedded in a resist pattern formed on a substrate without mixing the resist pattern and showing excellent durability against oxygen ashing and storage stability, and to provide a method for forming a reversed pattern. SOLUTION: The method for forming a reversed pattern includes the steps of: forming a resist pattern on a substrate; embedding a resin composition for pattern reverse in the resist pattern; and removing the resist pattern to form a reversed pattern, wherein the resin composition for pattern reverse contains polysiloxane and an organic solvent, and the polysiloxane is obtained by hydrolysis and/or condensation of one or more kinds of compounds expressed by [R1aSiX4-a] (wherein R1represents a 1-3C alkyl group, X represents a chlorine atom or -OR2, R2represents a 1-4C alkyl group and a represents an integer of 1 to 3). COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20070134493