QUARTZ CRYSTAL THIN FILM

• Main Authors: YAGI HIROMI, NONAKA SATOSHI, TAKAHASHI NAOYUKI, JINRIKI YOICHI, TAMANUKI KATSUMI, NAKAMURA TAKATO
• Format: Patent
• Language: English
• Published: 13.11.2008
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a quartz single crystal thin film excellent in cyrstallinity and optical characteristics. SOLUTION: On the surface of a substrate 5, a buffer layer of an amorphous crystal is deposited using a substance forming a hexagonal crystal. One or a plurality of silicon alkoxides chosen from the group consisting of tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane and tetrabutoxysilane is used as a silicon source, the silicon source is vaporized and introduced at atmospheric pressure, and the introduced silicon source is reacted with oxygen O2to be epitaxially grown on the buffer layer. COPYRIGHT: (C)2009,JPO&INPIT