SUBSTRATE FOR PHOTOMASK BLANK AND METHOD FOR MANUFACTURING THE SUBSTRATE, PHOTOMASK BLANK, AND PHOTOMASK

PROBLEM TO BE SOLVED: To provide a substrate for a photomask blank and a photomask blank in which film thickness uniformity in the plane of a resist film can be improved and high mask pattern accuracy is obtained, and to provide a photomask having a fine pattern with high pattern accuracy formed by...

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Bibliographic Details
Main Authors KOIKE KESAHIRO, TOCHIHARA YASUTAKA, MITSUI MASARU
Format Patent
LanguageEnglish
Published 23.10.2008
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:PROBLEM TO BE SOLVED: To provide a substrate for a photomask blank and a photomask blank in which film thickness uniformity in the plane of a resist film can be improved and high mask pattern accuracy is obtained, and to provide a photomask having a fine pattern with high pattern accuracy formed by using the photomask blank. SOLUTION: The substrate 1 for a photomask blank has a thin film for forming a transfer pattern on a light transmitting substrate, wherein the substrate 1 has main surfaces 11a, 11b and an end face 12 formed on the rim of the main surfaces, and the end face 12 includes a side face 12c of the substrate and chamfered faces 12a, 12b interposed between the side face and the main surfaces. The side face 12c has a flatness of ≤50 μm. The photomask blank has a thin film for forming a transfer pattern, the film formed on the main surface of the substrate 1. The photomask has a transfer pattern formed by patterning the thin film from the photomask blank. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20070101985