DEPOSITION SOURCE AND SPUTTERING APPARATUS

• Main Authors: ISHIBASHI AKIRA, OTA ATSUSHI, TAKAHASHI AKIHISA, SUGIURA ISAO, UKISHIMA YOSHIYUKI, TANI NORIAKI
• Format: Patent
• Language: English
• Published: 23.10.2008
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a deposition source in which use efficiency is high and a nodule is not formed. SOLUTION: A plurality of magnetic circuits 251, 252are arranged on the rear face of a target 22 and zero points p of the perpendicular components of the magnetic fields are annularly formed in positions corresponding to the respective magnetic circuits 251, 252on the surface of the target 22. When the one-way migration length L of a magnetron magnet system 24 is set at not less than the diameter D1along the reciprocating movement direction of the rings of the zero points p and the distance D2between the rings of the magnetic circuits 251, 252is set to be larger, the zero points p pass over the region on the inner periphery of the rings and the regions of the adjacent magnetic circuits 251, 252and sputtering is performed. COPYRIGHT: (C)2009,JPO&INPIT