METHOD OF CONTROLLING PARTICLE AND PLASMA PROCESSING CHAMBER

• Main Authors: MARASCHIN ROBERT A, WICKER THOMAS E
• Format: Patent
• Language: English
• Published: 02.10.2008
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a method of processing a substrate by reducing particle contamination of the substrate in a plasma processing chamber when the substrate is consecutively processed to process the substrate. SOLUTION: A plasma processing chamber is provided with a substrate holder 12 and silicon nitride members such as a liner 30, focus ring 14, or gas distribution plate 22. The member has an exposed face in the vicinity of the substrate holder 12. The exposed face is effective for minimizing particle contamination when processing the substrate. The chamber inductively couples with RF energy through the gas distribution plate 22 to supply a plasma gas with energy to make it a plasma state. COPYRIGHT: (C)2009,JPO&INPIT