METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a new method of manufacturing a semiconductor, which includes a step of removing silicon oxide film in an easy method. SOLUTION: The method of manufacturing a semiconductor device includes a step of immersing a base member 20, in which silicon oxide film 16a is forme...

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Bibliographic Details
Main Authors HARAYAMA TAKAHISA, SASAKI NORIHIKO, NAKAE MINORU
Format Patent
LanguageEnglish
Published 02.10.2008
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a new method of manufacturing a semiconductor, which includes a step of removing silicon oxide film in an easy method. SOLUTION: The method of manufacturing a semiconductor device includes a step of immersing a base member 20, in which silicon oxide film 16a is formed partly in an isolated state on its surface, in organic alkaline fluid 21; and a step of exfoliating a silicon oxide film 16a from the base member 20 selectively by immersing the processed base member 20 into water 22 (liquid containing water) and applying an ultrasonic wave. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20070076575