METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To improve the reliability and the productivity of a semiconductor device. SOLUTION: Metal wiring is provided in a first insulating film formed on a semiconductor substrate, the surface of the provided metal wiring is subjected to first plasma processing, the surface of the met...

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Bibliographic Details
Main Authors WATAYA HIROFUMI, YANAI KENICHI, OWADA TAMOTSU, OBARA NAOKI
Format Patent
LanguageEnglish
Published 02.10.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To improve the reliability and the productivity of a semiconductor device. SOLUTION: Metal wiring is provided in a first insulating film formed on a semiconductor substrate, the surface of the provided metal wiring is subjected to first plasma processing, the surface of the metal wiring subjected to the first plasma processing is exposed to a silicon based gas, the surface of the metal wiring exposed to the silicon based gas is subjected to second plasma processing, a silicon containing layer is formed on the metal wiring, and a second insulating film is formed on the silicon containing layer. Thereby, electromigration accompanying a fine semiconductor device is suppressed, stress migration is sufficiently suppressed, electrical reliability of the semiconductor device is improved, and the method of manufacturing the semiconductor device with high productivity is achieved. COPYRIGHT: (C)2009,JPO&INPIT
Bibliography:Application Number: JP20070071425