METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To improve the reliability and the productivity of a semiconductor device. SOLUTION: Metal wiring is provided in a first insulating film formed on a semiconductor substrate, the surface of the provided metal wiring is subjected to first plasma processing, the surface of the met...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
02.10.2008
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To improve the reliability and the productivity of a semiconductor device. SOLUTION: Metal wiring is provided in a first insulating film formed on a semiconductor substrate, the surface of the provided metal wiring is subjected to first plasma processing, the surface of the metal wiring subjected to the first plasma processing is exposed to a silicon based gas, the surface of the metal wiring exposed to the silicon based gas is subjected to second plasma processing, a silicon containing layer is formed on the metal wiring, and a second insulating film is formed on the silicon containing layer. Thereby, electromigration accompanying a fine semiconductor device is suppressed, stress migration is sufficiently suppressed, electrical reliability of the semiconductor device is improved, and the method of manufacturing the semiconductor device with high productivity is achieved. COPYRIGHT: (C)2009,JPO&INPIT |
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Bibliography: | Application Number: JP20070071425 |